I am currently Tenured Professor in School of Electrical Engineering at KAIST. I received Ph.D degree in Electronic Materials Program at Gwangju Institute of Science and Technology with Best Ph.D. Paper Award and Young Researcher Award SSDM in 2003. In 2002, during Ph.D program, I spent one year in working on epitaxial high-k dielectric in Oak Ridge National Laboratory, TN, US. In 2003, I joined Samsung Advanced Institute of Technology (SAIT), Giheung, Korea, where I participated in Charge Trap Flash (CTF) cell development. We proved that the CTF technology we developed in SAIT meets the specifications of the next generation of NAND Flash Memory. As technology was transferred from SAIT to Samsung Electronics, I moved to the Memory Business Division of Samsung Electronics Corporation with the desire to experience real technology. In 2005, I was a Process Integration Engineer and a Device Engineer with the Advanced Technology Development team of Samsung Electronics Corporation (SEC), being responsible for 8-, 16-, and 32-Gb NAND-type CTF memory devices. I have contributed to the development of the technologies of 8, 16 and 32 Gb NAND Flash memory products especially using the first memory to incorporate a CTF architecture, a revolutionary new structure to further increase cell density while greatly reducing interference coupling issues. After being part of 3-generation NAND flash memory projects at Samsung Electronic Corporation, I returened to SAIT in 2009, then I had some chances to take a look at alternative active channel materials such as amorphous oxide semiconductor. At the same time, I was involved in a few research projects such as graphene, 3-dimensional transistor, high performance amorphous oxide photo-transistor, all oxide-based interactive display technology and haptic materials and devices thanks to matrix project structures of SAIT. After being with SAMSUNG for 10 years with several awards, Samsung Paper Champion Award (1/2300 employees), Infinite Quest Award, Samsung Best Paper Award (within 1% among 1043 papers), Samsung Research Innovation Awards, In 2013, I was appointed to Associate Professor in the department of applied physics at Korea University, where I mainly worked on thin film transistor and hafnia ferroelectrics. Since 2018, I have established ANTONIS lab in EE of KAIST. Through vast experience, I have published with leading academic journals (Nature Materials, Nature Nanotechnology, Nano Letters, Advanced Materials and Proceeding of IEEE) and many Flagship conference proeceedings (IEEE IEDM, VLSI Symp., SID, and IDW) in the fields of gated three terminal photo transistor, graphene integrated device, CMOS image sensors, power device, and interactive display together with core materials for MOS and flash memory device applications. Such a wide range of research experience provides me with the research capability that I can present various possibilities in device aspect once I make a device with new alternative active channel and new functional materials. I have experience in both basic research and real technology development which gives me perspective and insight into technological evolution. My current research interests are artificial semiconductor device, next NAND flash memory gate stack, novel DRAM cell, computing-in-memory device, stretchable display, IoT sensor, electronic skin, hafnia ferroelectric. I am currently working as the Editorial Board Member of Nature Publication Group Sci. Rep and the Associate Editor of Springer Nanoconvergence.
Pioneering Materials Task Force Team of SAIT, SEC
Advanced Process Development Team of SEC
Advanced Technology Development Team of SEC
Materials and Devices Lab of SAIT,
Solid State Division of Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118 USA
Kiyotaka Wasa’s Laboratory of Yokohama City University, 22-2 Seto Kanazawaku Yokohama 236-0027, Japan
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Recognition Details | Dates | Remarks |
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Recognition Details Dates Remarks [Korea Univ. Sejong, Research Paper] Seoktap Research Award in SCI Paper The 1st among 250 Faculty Members |
2017. 01.03 | Individual |
[SAIT, Outstanding Research Performance] SAMSUNG PAPER CHAMPION AWARD, The 1st Prize among 1500 employees and 800 Ph.D.s in SAIT |
2013. 01.03 | Individual |
[SAIT, Research Paper] Research Innovation Award | 2012.03.07 | Team Award [Representative] |
[SAIT, Outstanding Performance] Infinite Quest Award for Developing Oxide-Based Interactive Display | 2012. 01.03 | Team Award [Member] |
[Samsung Group, Research Paper] Samsung Best Paper Award, Silver Award, Among 1043 Papers from the Whole Samsung Group |
2011.11.07 | First Author |
[SAIT, Outstanding Performance] Research Innovation Award for Developing Remote Touch Screen Array | 2011.02.07 | Team Award [Member] |
[SAIT, Outstanding Performance] Research Innovation Award for Photo-sensor TFT | 2010.05.04 | Team Award [Member] |
[GIST, Outstanding Research Performance] Best Paper Award at Ph.D. Graduation Ceremony. | 2003.02.18 | Individual |
[Int. Conf. on Solid State Devices Materials, Japan, Research Paper] Yong Research Award for Outstanding Research Paper at Int. Conf. on Solid State Devices Materials, the most biggest conference in electronic materials devices in Japan | 2002.09.17 | First Author |