"The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications"

Hyojun Choi, Giuk Kim, Hunbeom Shin, Yunseok Nam, Sanghun Jeon, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, IEEE International Reliability Physics Symposium (IRPS), Accepted,

"Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing"

Hunbeom Shin, Giuk Kim, Sujeong Lee, Geonhyeong Kang, Hyojun Choi, Taeseung Jung, Sanghun Jeon, IEEE International Reliability Physics Symposium (IRPS), Accepted,

"Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory"

Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Jinho Ahn, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"Achieving Morphotropic Phase Boundary at Extremely Low-Temperature (200 ∘C) in HZO (>10 nm) Films Using Microwave Annealing"

Taeseung Jung, Hunbeom Shin, Jinho Ahn, Sanghun Jeon, IEEE Transactions on Electron Devices, Accepted,

"A Wireless, Battery-Free Temperature Sensor Utilizing the Morphotropic Phase Boundary of HfxZr1-xO2 Thin Film"

Ketong Yang , Seungyeob Kim , Taeseung Jung, Sanghun Jeon, Journal of Materials Chemistry C,

"Imprinted Antiferroelectric with Low Damage Process for High Performance Negative Capacitance NAND Flash Memory"

Sangho Lee, Giuk Kim, Yunseok Nam, Yeongseok Jeong, Taeho Kim, Hunbeom Shin, Sangmok Lee, Jinho Ahn, Sanghun Jeon, IEEE Electron Device Letters, Accepted,

"Very high frequency (∼100 MHz) plasma enhanced atomic layer deposition high-κ hafnium zirconium oxide capacitors near morphotropic phase boundary with low current density & high-κ for DRAM technology"

Ketong Yang, Hunbeom Shin, Seungyeob Kim, Taeseung Jung, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing"

Geonhyeong Kang, Hunbeom Shin, Seungyeob Kim, Lingwei Zhang, Giuk Kim, Sujeong Lee, Yunseok Nam, Chaeheon Kim, Hoon Kim, Jinho Ahn, Sanghun Jeon, Journal of Vacuum Science & Technology B, Accepted,

"Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations"

Hongrae Joh, Sangho Lee, Jinho Ahn, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"A six-level ferroelectric storage cell based on a bidirectional imprint field"

Chaeheon Kim, Junghyeon Hwang, Hunbeom Shin, Jinho Ahn, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions"

Junghyeon Hwang, Youngin Goh, Sanghun Jeon, Advanced science news,

"Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory"

Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Jinho Ahn, Sanghun Jeon, Journal of Materials Chemistry C, Accepted,

"Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures"

Junghyeon Hwang, Chaeheon Kim, Jinho Ahn, Sanghun Jeon, Nano Convergence, Accepted,

"Optimizing De-trap Pulses in Gate-injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue"

Giuk Kim, Hyojun Choi, Hongrae Cho, Sangho Lee, Hunbeom Shin, Hyunjun Kang, Hoon Kim, Seokjoong Shin, Seonjae Park, Sunseong Kwon, Youngjin Lim, Kang Kim, Jong Min Chung, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn, Sanghun Jeon, IEEE Electron Device Letters, Accepted,

"Enhancing performance of microbolometers by utilizing low-temperature polycrystalline silicon"

Taeseung Jung, Seungyeob Kim, Sangho Lee, Jinho Ahn, Sanghun Jeon, Journal of Vacuum Science & Technology B, Accepted,