"Compositional Tuning of Bilayer Hf1−xZrxO2 for Enhanced Negative Capacitance and Energy Storage Performance"

Seungyeon Chang, Sangho Lee, Sanghun Jeon, physica status solidi (RRL)–Rapid Research Letters,

"Band Engineering of Gate Interlayer for Low-voltage Operation and Enhanced Reliability in Gate-injection Type FeFETs"

Hoon Kim, Giuk Kim, Hyojun Choi, Hongrae Joh, Hyunjun Kang, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, IEEE Electron Device Letters,

"A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention"

Hyunjun Kang, Hongrae Joh, Junhyeok Kwak, Giuk Kim, Hyojun Choi, Hoon Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, IEEE Transactions on Electron Devices,

"Engineering Negative Capacitance in Hf0.5Zr0.5O2 for Low-Power and Reliable Charge Trap Flash Memory"

Yunseok Nam, Sangho Lee, Yangjin Jung, Kang Kim, Jihye Ok, Jinwook Ha, Heemin Yoon, Mincheol Shin, Sang-Hee Ko Park, Jinho Ahn, Sanghun Jeon, ACS Applied Materials & Interfaces,

"Vertical NAND in a Ferroelectric-driven Paradigm Shift"

Giuk Kim, Hyojun Choi, Prasanna Venkat Ravindran, Moonyoung Jung, Sanghyun Park, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Sukjoong Shin, Asif Khan, Sanghun Jeon, Kai Ni, arXiv,

"Ferroelectricity in Sub‐3 nm HZO via a Thin Mo Layer: Interface Engineering for Scalable Memory"

Yongsu Kim, Junghyeon Hwang, Chaeheon Kim, Geonhyeong Kang, Sanghun Jeon, physica status solidi (a),

"Interface engineering of oxidized Mo electrodes for imprint stability and enhanced endurance in hafnia-based ferroelectric devices"

Junghyeon Hwang, Chaeheon Kim, Geonhyeong Kang, Yongsu Kim, Jinho Ahn, Sanghun Jeon, Journal of Materials Chemistry C,

"P‐125: WITHDRAWN: Leaky Antiferroelectric Oxide TFT for Physical Reservoir Computing Devices Achieving BEOL Compatibility with Microwave Annealing"

Taeseung Jung, Heemin Yoon, Sanghun Jeon, SID Symposium Digest of Technical Papers,

"Low-Temperature (450 ∘C) Crystallization of Al:HfO2 Ferroelectric Thin Films Enabled by Microwave Annealing Process"

Giuk Kim, Lingwei Zhang, Sangho Lee, Hunbeom Shin, Youngjin Lim, Kang Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn, Sanghun Jeon, IEEE Transactions on Electron Devices,

"Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems"

Giuk Kim, Sangho Lee, Hyojun Choi, Yangjin Jung, Woongjin Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Mincheol Shin, Jinho Ahn, Sanghun Jeon, Advanced Science, Accepted,

"Stabilized negative capacitance for near-theoretical efficiency and high reliability in charge trap flash memory"

Sangho Lee, Giuk Kim, Yunseok Nam, Yangjin Jeong, Hyunjun Kang, Woongjin Kim, Hunbeom Shin, Mincheol Shin, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, Materials Today Physics, Accepted,

"Vertically Integrated In-Sensor Processing System Based on Three-Dimensional Reservoir for Artificial Tactile System"

Taeseung Jung, Dohan Kim, Giuk Kim, Seungyeob Kim, Hyojun Choi, Minyoung Jo, Yunjeong Kim, Jinho Ahn, Seong-Ook Jung, Sanghun Jeon, Energy & Environmental Materials, Accepted,

"Near-Sensor Analog Computing via Monolithic 3DPiezoelectric Sensor–FeFET for Tactile Sensing System"

Woongjin Kim, Seungyeob Kim, Jinwook Ha, Taeseung Jung, Yunjeong Kim, Jinho Ahn, Sanghun Jeon, Advanced Functional Materials, Accepted,

"Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer"

Giuk Kim , Taeho Kim, Hyojun Choi, Seokjoong Shin, Hoon Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, IEEE Transactions on Electron Devices, Accepted,

"Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering"

Seokjoong Shin, Giuk kim, Hyojun Choi, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn and Sanghun Jeon, IEEE Electron Device Letters, Accepted,