Introduction
- Introduction
  - About Antonis LAB
  - Contact
Member
- Member
Research
- Research
Publication
- Publication
  - Highlights
  - Journal
  - Patent
  - Conference
Board
- Board
  - News
  - Gallery

CONTACT

ANTONIS Lab Publication

Conference

Total 27건 1 페이지

2025
27

"The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications" Hyojun Choi, Giuk Kim, Hunbeom Shin, Yunseok Nam, Sanghun Jeon, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, 2025 IEEE International Reliability Physics Symposium (IRPS), Accepted, 2025
26

"Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing" Hunbeom Shin, Giuk Kim, Sujeong Lee, Geonhyeong Kang, Hyojun Choi, Taeseung Jung, Sanghun Jeon, Hyung-Jun Kim, Jinho Ahn, 2025 IEEE International Reliability Physics Symposium (IRPS), Accepted, 2025
2024
25

"Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-Free 3D NAND Cell: Experimental and Modeling" Giuk Kim†, Hyunjun Kang†, Sangho Lee, Hyojun Choi, Yangjin Jung, Mincheol Shin, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2024 IEEE International Electron Devices Meeting (IEDM), Accepted, 2024

LINK
24

"Oxide Channel Ferroelectric NAND Device with Source-Tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 Years) and Disturbance Immunity (ΔVth≤0.1V) for QLC Operation" Hongrae Joh†, Giuk Kim†, Jihye Ock, Seungyeob Kim, Sangmok Lee, Sangho Lee, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2024 IEEE International Electron Devices Meeting (IEDM), Accepted, 2024

LINK
23

"Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling" Sangho Lee†, Giuk Kim†, Chaeheon Kim, Yangjin Jung, Jeonghyun Hwang, Yunseok Nam, Mincheol Shin, Youngin Goh, Mintae Ryu, Jihye Suh, Kilho Lee, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2024 IEEE International Electron Devices Meeting (IEDM), Accepted, 2024

LINK
22

"In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling" Giuk Kim†, Hyojun Choi†, Hunbeom Shin, Sangho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn and Sanghun Jeon, 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Accepted, 2024
21

"Low-Damage Processed and High-Pressure Annealed High-κ Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-κ of 70 for DRAM Technology" Venkateswarlu Gaddam†, Junghyeon Hwang†, Hunbeom Shin, Chaeheon Kim, Giuk Kim, Hyung-Jun Kim, Jooho Lee, Hyun-Cheol Kim, Bumsu Park, Suhwan Lim, Sang Yun Kim, Kwangsoo Kim, Sungho Lee, Daewon Ha, Jinho Ahn and Sanghun Jeon, 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Accepted, 2024
2023
20

"Development of MFMIS Gatestack with Thick Hafnium Zirconium Oxide (HZO) for Nonvolatile Memory Application" Bohyeon Kang, Jongseo Park, Junghyeon Hwang, Sangho Lee, Hunbeom Shin, Jehyun An, Hyunseo You, Sung-Min Ahn, Sanghun Jeon, Rock-Hyun Baek, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023
19

"Ultra-high Tunneling Electroresistance Ratio (2×104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5×103) Ferroelectric Tunnel Junction" Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park and Sanghun Jeon, 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2022
18

"The impact of floating gate insertion regarding channel percolation of ferroelectric FET" Junghyeon Hwang, Sangho Lee, 2022 International Conference on Solid State Devices and Materials (SSDM), 2022
17

"A highly integrated crosspoint array using self-rectifying FTJ for dual-mode operations: CAM and PUF" Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Minki Kim, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung, 2022 IEEE 48th European Solid State Circuits Conference (ESSCIRC), 2022
16

"Wearable pressure sensor based on solution-coated fabric for pulse detection" Taehyong Eom, Kyungkwan Kim, Minhyun Jung, Jihyun Bae, Sanghun Jeon, 2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), 2022
15

"Flexible and stretchable conductive fabric for temperature detection" Taehyong Eom, Minhyun Jung, Jihyun Bae, Sanghun Jeon, 2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), 2022
14

"Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices" Giuk Kim, Hunbeom Shin, Taehyong Eom, Minhyun Jung, Taeho Kim, Sangho Lee, Minki Kim, Yeongseok Jeong, Ji-Sung Kim, Kab-Jin Nam, Bong Jin Kuh and Sanghun Jeon, International Electron Devices Meeting (IEDM) 2022, 2022
2021
13

"High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications" Youngin Goh, Junghyeon Hwang, Minki Kim, Minhyun Jung, Sehee Lim, Seong-Ook Jung, Sanghun Jeon, International Electron Devices Meeting (IEDM), 2021

LINK

검색