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ANTONIS Lab Publication

Conference

Total 36건 1 페이지

2025
36

"M3D Integrated Neuromorphic Vision Sensor with a-Si Photodiode and Poly-Si Spike Generator for In-Sensor Spiking Convolution" Seungyeob Kim, Seungmin Cheon, Seonjae Park, Taeseung Jung, Sanghun Jeon, 2025 IEEE International Electron Devices Meeting (IEDM), Accepeted, 2025
35

"Ultrathin-Mo-Enabled NC-NAND with Sub-3.5 nm HZO for Scalable High-MW Operation" Sangho Lee, Yongsu Kim, Yangjin Jung, Seungyeon Chang, Seokjoong Shin, Giuk Kim, Hongrae Joh, Woongin Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2025 IEEE International Electron Devices Meeting (IEDM), Accepted, 2025
34

"Sub-1 ms Bio-Inspired Time-to-First Spike (TTFS) Neuromorphic Tactile System Using L-AFeFET and Threshold Switch Devices" Taeseung Jung, Hyunsik Choi,Sunjae Park, Seungyeob Kim, Jinho Ahn, Jiyong Woo, Sanghun Jeon, 2025 IEEE International Electron Devices Meeting (IEDM), Accepted, 2025
33

"Decoupling and Quantifying Polarization and Trap Charges in MIFIS FeNAND: Insights into Charge Dynamics and Reliability" Hongrae Joh, Hyunjun Kang, Junhyeok Kwak, Giuk Kim, Hyojun Choi, Hoon Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2025 IEEE International Electron Devices Meeting (IEDM), Accepted, 2025
32

"CMOS-Compatible Oxide TFT-Based 2T-2C Near-Pixel Analog Compute Cell with ADC/DAC-Free Sensor Interface for Energy-Efficient Feature Extraction" Seonjae Park, Seungyeob Kim, Seungmin Cheon, Taeseung Jung, Jinho Ahn, Sanghun Jeon, 2025 IEEE International Electron Devices Meeting (IEDM), Accepted, 2025
31

"A Highly Reliable Ferroelectric NAND Cell with Ultra thin IGZO Charge Trap Layer: Trap Profile Engineering for Endurance and Retention Improvement" Hyunjun Kang, Hongrae Joh, Junhyeok Kwak, Giuk Kim, Hyojun Choi, Hoon Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, and Sanghun Jeon, 2025 IEEE International Electron Devices Meeting (IEDM), Accepted, 2025
30

"Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing" Hunbeom Shin, Giuk Kim, Sujeong Lee, Geonhyeong Kang, Hyojun Choi, Taeseung Jung, Sanghun Jeon, IEEE International Reliability Physics Symposium (IRPS), Accepted, 2025

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29

"The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications" Hyojun Choi, Giuk Kim, Hunbeom Shin, Yunseok Nam, Sanghun Jeon, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, IEEE International Reliability Physics Symposium (IRPS), Accepted, 2025

LINK
28

"Exploring FeFET Degradation Mechanisms: Mid-Interlayer as a Viable Solution for Stable Retention, Disturb Immunity, and Low Vth Variation" Giuk Kim, Sangho Lee, Hyojun Choi, Hoon Kim, Seokjoong Shin, Sanghyun Park , Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Accepted, 2025, 2025

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27

"The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications" Hyojun Choi, Giuk Kim, Hunbeom Shin, Yunseok Nam, Sanghun Jeon, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, 2025 IEEE International Reliability Physics Symposium (IRPS), Accepted, 2025
26

"Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing" Hunbeom Shin, Giuk Kim, Sujeong Lee, Geonhyeong Kang, Hyojun Choi, Taeseung Jung, Sanghun Jeon, Hyung-Jun Kim, Jinho Ahn, 2025 IEEE International Reliability Physics Symposium (IRPS), Accepted, 2025
2024
25

"Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-Free 3D NAND Cell: Experimental and Modeling" Giuk Kim†, Hyunjun Kang†, Sangho Lee, Hyojun Choi, Yangjin Jung, Mincheol Shin, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2024 IEEE International Electron Devices Meeting (IEDM), Accepted, 2024

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24

"Oxide Channel Ferroelectric NAND Device with Source-Tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 Years) and Disturbance Immunity (ΔVth≤0.1V) for QLC Operation" Hongrae Joh†, Giuk Kim†, Jihye Ock, Seungyeob Kim, Sangmok Lee, Sangho Lee, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2024 IEEE International Electron Devices Meeting (IEDM), Accepted, 2024

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23

"Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling" Sangho Lee†, Giuk Kim†, Chaeheon Kim, Yangjin Jung, Jeonghyun Hwang, Yunseok Nam, Mincheol Shin, Youngin Goh, Mintae Ryu, Jihye Suh, Kilho Lee, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2024 IEEE International Electron Devices Meeting (IEDM), Accepted, 2024

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22

"In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling" Giuk Kim†, Hyojun Choi†, Hunbeom Shin, Sangho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn and Sanghun Jeon, 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Accepted, 2024

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