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ANTONIS Lab Publication

Patent

Total 115건 1 페이지

Before~2005
115

Method of fabricating gate dielectric for use in semiconductor device Inventor : 황현상,전상훈
Application No. : KR1020000065830A Registration No. : KR100359489B1

LINK
114

Gate insulator of MOS transistor and method for fabricating the same Inventor : 황현상,이혜란,전상훈
Application No. : KR10-2001-0041230A Registration No. : KR100379621B1

LINK
113

Non-volatile memory device having an asymmetrical gate dielectric layer and method of manufacturing the same Inventor : Jeong Han, Soodoo Chae, Sanghun Jeon
Application No. : 11084106 Registration No. : US20050205923A1

LINK
112

Method of fabricating gate dielectric for use in semiconductor device having nitridation by ion implantation Inventor : Hyunsang Hwang, Sanghun Jeon
Application No. : 10-0359489 Registration No. : US6797645B2

LINK
2025
111

Triple structure cell and element including the same Inventor : Sanghun Jeon
110

Semiconductor device having 3D stacked structure and method of manufacturing the same Inventor : Youngkwan Cha, Jaechul Park, Sanghun Jeon
109

3D non-volatile memory, operating method of the same and manufacturing method of the same Inventor : Sanghun Jeon, GOH Youngin
108

Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same Inventor : Sanghun Jeon, Taeho Kim
107

Microbolometer and method of manufacturing the same Inventor : Jae Chul Park, Sanghun Jeon
2023
106

Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same Inventor : Sanghun Jeon, Taeho Kim
105

Nonvolatile memory device and cross point array device including the same Inventor : Sanghun Jeon, GOH Youngin
104

3d non-volatile memory, operating method of the same and manufacturing method of the same Inventor : Sanghun Jeon, GOH Youngin
2022
103

Transistor with increased channel width and manufacturing method thereof Inventor : Sanghun Jeon
102

Triple structure cell and element including the same Inventor : Sanghun Jeon
101

Oxide electrode for device with polarizable material layer Inventor : Sanghun Jeon, GOH Youngin

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