"The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications"

Hyojun Choi, Giuk Kim, Hunbeom Shin, Yunseok Nam, Sanghun Jeon, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, 2025 IEEE International Reliability Physics Symposium (IRPS), Accepted,

"Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing"

Hunbeom Shin, Giuk Kim, Sujeong Lee, Geonhyeong Kang, Hyojun Choi, Taeseung Jung, Sanghun Jeon, Hyung-Jun Kim, Jinho Ahn, 2025 IEEE International Reliability Physics Symposium (IRPS), Accepted,

"Novel Strategies Toward High-Performance FeFET for Computing In Memory Application"

Giuk Kim, Hyojun Choi, Sangho Lee, Hunbeom Shin, Lingwei Zhang, Sangmok Lee, Yunseok Nam, Woongjin Kim, Jihye Ock, Sujeong Lee, Hyunjun Kang, Sanghun Jeon, 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), Accepted,

"Charge Trap Flash with Superior Program Efficiency by Negative Capacitance-Boosting Effect"

Giuk Kim, Hyojun Choi, Sangho Lee, Hunbeom Shin, Lingwei Zhang, Sangmok Lee, Yunseok Nam, Woongjin Kim, Jihye Ock, Sujeong Lee, Hyunjun Kang, Sanghun Jeon, 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), Accepted,

"Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-Free 3D NAND Cell: Experimental and Modeling"

Giuk Kim†, Hyunjun Kang†, Sangho Lee, Hyojun Choi, Yangjin Jung, Mincheol Shin, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2024 IEEE International Electron Devices Meeting (IEDM), Accepted,

"Oxide Channel Ferroelectric NAND Device with Source-Tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 Years) and Disturbance Immunity (ΔVth≤0.1V) for QLC Operation"

Hongrae Joh†, Giuk Kim†, Jihye Ock, Seungyeob Kim, Sangmok Lee, Sangho Lee, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2024 IEEE International Electron Devices Meeting (IEDM), Accepted,

"Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling"

Sangho Lee†, Giuk Kim†, Chaeheon Kim, Yangjin Jung, Jeonghyun Hwang, Yunseok Nam, Mincheol Shin, Youngin Goh, Mintae Ryu, Jihye Suh, Kilho Lee, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon, 2024 IEEE International Electron Devices Meeting (IEDM), Accepted,

"In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling"

Giuk Kim†, Hyojun Choi†, Hunbeom Shin, Sangho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn and Sanghun Jeon, 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Accepted, 1-2

"Low-Damage Processed and High-Pressure Annealed High-κ Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-κ of 70 for DRAM Technology"

Venkateswarlu Gaddam†, Junghyeon Hwang†, Hunbeom Shin, Chaeheon Kim, Giuk Kim, Hyung-Jun Kim, Jooho Lee, Hyun-Cheol Kim, Bumsu Park, Suhwan Lim, Sang Yun Kim, Kwangsoo Kim, Sungho Lee, Daewon Ha, Jinho Ahn and Sanghun Jeon, 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Accepted, 1-2

"Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network"

Junghyeon Hwang, Hongrae Joh, Chaeheon Kim, Jinho Ahn, Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted, 16, 2, 2467-2476

"Ultra-high Tunneling Electroresistance Ratio (2×104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5×103) Ferroelectric Tunnel Junction"

Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park, Sanghun Jeon, 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

"Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications"

Hongrae Joh, Sooji Nam, Minhyun Jung, Hunbeom Shin, Sung Haeng Cho, Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted, 15, 44, 51339-51349

"Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions"

Junghyeon Hwang, Youngin Goh, Sanghun Jeon, Small, Accepted, 2305271

"Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices"

Giuk Kim, Hunbeom Shin, Taehyong Eom, Minhyun Jung, Taeho Kim, Sangho Lee, Minki Kim, Yeongseok Jeong, Ji-Sung Kim, Kab-Jin Nam, Bong Jin Kuh and Sanghun Jeon, International Electron Devices Meeting (IEDM) 2022,

"The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications"

Taeho Kim†, Giuk Kim†, Dong Han Ko, Junghyeon Hwang, Sangho Lee, Hunbeom Shin, Yeongseok Jeong, Seong-Ook Jung, and Sanghun Jeon, Advanced Functional Materials,