Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-Free 3D NAND Cell: Experimental and Modeling 

Year

2024 

Author

Giuk Kim†, Hyunjun Kang†, Sangho Lee, Hyojun Choi, Yangjin Jung, Mincheol Shin, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon 

Conference

2024 IEEE International Electron Devices Meeting (IEDM) 

Status

Accepted 

Link

http://doi.org/10.1109/IEDM50854.2024.10873411 75회 연결