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Introduction
About Antonis LAB
Contact
Member
Professor
Post Doctoral Researchers
Ph.D. Students
M.S. Students
Alumni
Research
Research Topic
Research Projects
Research Facility
Publication
Highlights
Journal
Patent
Conference
Board
News
Gallery
ANTONIS Lab
Publication
Highlights
Journal
Patent
Conference
Conference
Highlights
Journal
Patent
Conference
Conference
Conference 카테고리
전체
2025
열린 분류
2024
2023
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2016
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2012
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Before~2005
Total 5건
1 페이지
2024
5
"Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-Free 3D NAND Cell: Experimental and Modeling"
Giuk Kim†, Hyunjun Kang†, Sangho Lee, Hyojun Choi, Yangjin Jung, Mincheol Shin, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon,
2024 IEEE International Electron Devices Meeting (IEDM),
Accepted,
2024
LINK
4
"Oxide Channel Ferroelectric NAND Device with Source-Tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 Years) and Disturbance Immunity (ΔVth≤0.1V) for QLC Operation"
Hongrae Joh†, Giuk Kim†, Jihye Ock, Seungyeob Kim, Sangmok Lee, Sangho Lee, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon,
2024 IEEE International Electron Devices Meeting (IEDM),
Accepted,
2024
LINK
3
"Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling"
Sangho Lee†, Giuk Kim†, Chaeheon Kim, Yangjin Jung, Jeonghyun Hwang, Yunseok Nam, Mincheol Shin, Youngin Goh, Mintae Ryu, Jihye Suh, Kilho Lee, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon,
2024 IEEE International Electron Devices Meeting (IEDM),
Accepted,
2024
LINK
2
"In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling"
Giuk Kim†, Hyojun Choi†, Hunbeom Shin, Sangho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn and Sanghun Jeon,
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Accepted,
2024
1
"Low-Damage Processed and High-Pressure Annealed High-κ Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-κ of 70 for DRAM Technology"
Venkateswarlu Gaddam†, Junghyeon Hwang†, Hunbeom Shin, Chaeheon Kim, Giuk Kim, Hyung-Jun Kim, Jooho Lee, Hyun-Cheol Kim, Bumsu Park, Suhwan Lim, Sang Yun Kim, Kwangsoo Kim, Sungho Lee, Daewon Ha, Jinho Ahn and Sanghun Jeon,
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Accepted,
2024
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