Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-Free 3D NAND Cell: Experimental and Modeling

Author

Giuk Kim†, Hyunjun Kang†, Sangho Lee, Hyojun Choi, Yangjin Jung, Mincheol Shin, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon

Journal

2024 IEEE International Electron Devices Meeting (IEDM)

Status

Accepted

Year

2024

Link

http://doi.org/10.1109/IEDM50854.2024.10873411 451회 연결