Oxide Channel Ferroelectric NAND Device with Source-Tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 Years) and Disturbance Immunity (ΔVth≤0.1V) for QLC Operation

Author

Hongrae Joh†, Giuk Kim†, Jihye Ock, Seungyeob Kim, Sangmok Lee, Sangho Lee, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon

Journal

2024 IEEE International Electron Devices Meeting (IEDM)

Status

Accepted

Year

2024

Link

https://doi.org/10.1109/IEDM50854.2024.10873376 565회 연결