Introduction
Member
Research
Publication
Board
Low-Temperature Crystallization of Nitride Electrode-Based Dielectric Films
연구과제명: Nitride 전극 기반 유전막의 저온 결정화연구비: 60,000,000 원/년
Period : 2023-06-01 ~ 2024-05-31
Sponsor : Samsung Advanced Institute of Technology (SAIT)
Development of High-Performance NAND Flash Memory Based on Negative Capacitance
연구과제명: 음의 정전 용량 (Negative Capacitance) 기반 고성능 NAND Flash Memory 개발연구비: 70,000,000 원/년
Period : 2023-08-01 ~ 2024-07-31
Sponsor : Samsung Electronics Co., Ltd. (SEC)
Development of 8-inch process platform for simultaneous integration of new devices and CMOS devices
연구과제명: 신소자 및 CMOS 동시 집적을 위한 8인치 공정 플랫폼 개발
Period : 2022.01.01~ 2023.07.30
Sponsor : National Research Foundation of Korea (NRF)
Development of Hafnia based high-k dielectric for oxide-TFT for display application
연구과제명: 디스플레이용 Oxide-TFT 적용을 위한 하프니아 기반 High-k 절연막 개발연구비 : 60,000,000 원/년
Period : 2021-09-01~ 2023-08-31
Sponsor : LG Display
Development and theoretical research of FeFET thin film technology
연구과제명: FeFET 박막 기술 개발 및 이론 연구연구비: 70,000,000 원/년
Period : 2022-08-01 ~ 2023-07-31
Development of monolithic 3D integration process based on non-Si material for building M3D platform
연구과제명: 비실리콘 기반 모놀리식 3차원 집적 플랫폼 기술개발
Period : 2022-01-01 ~ 2023-02-28
Development of 3-terminal logic-memory fusion device and architecture for deep neural network acceleration
Period : 2020-05-01 ~ 2022-12-31
Development and theoretical research of FeFET thin film technology for DRAM
Period : 2021-08-01 ~ 2022-07-31
Hybrid multifunctional sensor for wearable device application
Period : 2018-02-26 ~ 2021-12-31
Sponsor : KAIST
Research on materials capable of electric dipole switching, three-terminal device and architecture
Period : 2019-06-28 ~ 2021-12-31
High performance (Endurance 10^12 Retention 85℃/10^5 sec. switching time within 15ns) hafnium oxide ferroelectric transistor memory device technology development and theoretical research
Period : 2018-02-26 ~ 2021-09-30
Sponsor : Korea Semiconductor Research Association
Sponsor : Korea Evaluation Institute of Industrial Technology (KEIT)
Development of high-quality HfO2 ferroelectric process for future semiconductor devices and research on new materials
Period : 2018-06-01 ~ 2021-05-31
Low Temperature Process (<550°C) Hafnia Ferroelectric Tunnel Junction for Non-Volatile Logic
Period : 2018-03-01 ~ 2021-02-28
Low-temperature hafnia ferroelectric process development and TFT integration research for functional TFT
Period : 2019-07-01 ~ 2020-06-30