Introduction
Member
Research
Publication
Board
Research on materials capable of electric dipole switching, three-terminal device and architecture
Period : 2019-06-28 ~ 2021-12-31
Sponsor : National Research Foundation of Korea (NRF)
High performance (Endurance 10^12 Retention 85℃/10^5 sec. switching time within 15ns) hafnium oxide ferroelectric transistor memory device technology development and theoretical research
Period : 2018-02-26 ~ 2021-09-30
Sponsor : Korea Semiconductor Research Association
Sponsor : Korea Evaluation Institute of Industrial Technology (KEIT)
Development of high-quality HfO2 ferroelectric process for future semiconductor devices and research on new materials
Period : 2018-06-01 ~ 2021-05-31
Sponsor : Samsung Electronics Co., Ltd. (SEC)
Low Temperature Process (<550°C) Hafnia Ferroelectric Tunnel Junction for Non-Volatile Logic
Period : 2018-03-01 ~ 2021-02-28
Low-temperature hafnia ferroelectric process development and TFT integration research for functional TFT
Period : 2019-07-01 ~ 2020-06-30
Sponsor : LG Display
Hybrid multifunctional sensor for wearable device application
Period : 2018-03-01 ~ 2020-02-29
Hafnia ferroelectric transistor process development and device research
Period : 2018-07-23 ~ 2019-12-31
Super-steep switching device technology research using new materials and new structures
Period : 2018-02-26 ~ 2019-12-31
Development of high-sensitivity (minimum pressure 50Pa, high-speed 20ms) and multi-mode (pressure, temperature, slip) tactile sensor technology for robot electronic skin)
Period : 2018-02-26 ~ 2019-06-30
Development of high-efficiency omni-directional visible light sensing dual photoactive inorganic semiconductor-based phototransistor
Period : 2018-07-01 ~ 2019-06-30