Ultra-high Tunneling Electroresistance Ratio (2×104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5×103) Ferroelectric Tunnel Junction 

Year

2023 

Author

Junghyeon Hwang 

Co-author

Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park and Sanghun Jeon 

Conference

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)