Ultra-high Tunneling Electroresistance Ratio (2×104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5×103) Ferroelectric Tunnel Junction

Author

Junghyeon Hwang, Chaeheon Kim, Hunbeom Shin, Hwayoung Kim, Sang-Hee Ko Park, Sanghun Jeon

Journal

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Year

2023

Link

https://ieeexplore.ieee.org/document/10185231?signout=success 143회 연결