Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering
- Journal
- ACS Applied Materials & Interfaces
- Vol
- 12
- Page
- 57539-57546
- Year
- 2020
- Link
- https://pubs.acs.org/doi/full/10.1021/acsami.0c15091 717회 연결