ANTONIS Lab Publication

Highlights

Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering
Author
Youngin Goh, Junghyeon Hwang, Sanghun Jeon
Journal
ACS Applied Materials & Interfaces
Vol
12
Page
57539-57546
Year
2020