Efficient Suppression of Defects and Charge Trapping in High Density In–Sn–Zn–O Thin Film Transistor Prepared using Microwave-Assisted Sputter
- Journal
- ACS Applied Materials & Interfaces
- Vol
- 9
- Page
- 36962-36970
- Year
- 2017
- Link
- https://pubs.acs.org/doi/full/10.1021/acsami.7b08065 294회 연결