Defects and Charge-Trapping Mechanisms of Double-Active-Layer In–Zn–O and Al–Sn–Zn–In–O Thin-Film Transistors
- Journal
- ACS Applied Materials & Interfaces
- Vol
- 9
- Page
- 9271-9279
- Year
- 2017
- Link
- https://pubs.acs.org/doi/full/10.1021/acsami.7b01533 108회 연결